Please use this identifier to cite or link to this item: http://repositorio.uptc.edu.co/handle/001/1618
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dc.contributor.advisorMoreno Rubio, Jorge Julián (Director de tesis)spa
dc.contributor.authorPérez Mancera, Lady Fernandaspa
dc.contributor.authorRestrepo Burgos, Normaspa
dc.date.accessioned2017-02-16T20:32:47Z-
dc.date.available2017-02-16T20:32:47Z-
dc.date.issued2014-
dc.identifier.citationPérez Mancera, L. F. y Restrepo Burgos, N. (2014). Theoretical and experimental comparison between tuned load and class-F power amplifiers. (Undergraduate work). Universidad Pedagógica y Tecnológica de Colombia, Sogamoso. http://repositorio.uptc.edu.co/jspui/handle/001/1618spa
dc.identifier.urihttps://repositorio.uptc.edu.co/handle/001/1618-
dc.description54 páginas : ilustraciones color, cuadros.spa
dc.description.abstractThis document presents the principles of these two high e ciency power ampli ers. Then the design methodology and realization based on the same active device are described. Finally, the obtained results that show the performance especially of drain e ciency, gain and output power are compared between both ampli ers.spa
dc.format.mimetypeapplication/pdfspa
dc.language.isoengspa
dc.publisherUniversidad Pedagógica y Tecnológica de Colombiaspa
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.5/co/spa
dc.subjectAmplificadores de potenciaspa
dc.subjectMicroprocesadores - Diseñospa
dc.subjectAmplificadores (Electrónica)spa
dc.subjectElectrónica de potenciaspa
dc.subjectIngeniería Electrónica - Tesis y disertaciones académicasspa
dc.titleTheoretical and experimental comparison between tuned load and class-F power amplifiersspa
dc.typeTrabajo de grado - Pregradospa
dcterms.bibliographicCitationBumman Kim, Junghwan Moon, and Ildu Kim. \E ciently ampli ed". IEEE Microw. Mag, 11(5):87{100, 2010.spa
dcterms.bibliographicCitationK. Kim and R. Prasad. \4G: Roadmap and Emerging Communication Technologies". Artech House. Incorporated, 2006.spa
dcterms.bibliographicCitationS Gao, P Butterworth, A Sambell, C Sanabria, H Xu, S Heikman, U Mishra, and RA York. \Microwave class-F and inverse class-F power ampli ers designs using GaN technology and GaAs pHEMT". pages 1719{1722, 2006.spa
dcterms.bibliographicCitationHyun-chul Park, Gunhyun Ahn, Sung-chan Jung, Cheon-seok Park, Wan-soo Nah, Byungsung Kim, and Youngoo Yang. \ High-e ciency class-F ampli er design in the presence of internal parasitic components of transistors". In Microwave Conference, 2006. 36th European, pages 184{187. IEEE, 2006.spa
dcterms.bibliographicCitationPaolo Colantonio, Franco Giannini, and Ernesto Limiti. High e ciency RF and microwave solid state power ampli ers. J. Wiley, 2009.spa
dcterms.bibliographicCitationJie Fang, J Moreno, R Quaglia, Riccardo Tinivella, V Camarchia, M Pirola, and G Ghione. \Development strategy for GaN-based high-e ciency hybrid medium-power RF ampli ers through low-cost substrate prototyping". pages 1{4, 2010.spa
dcterms.bibliographicCitationP. Colantonio, F. Giannini, E. Limiti, and V. Teppati. \An approach to harmonic load- and source-pull measurements for high-e ciency PA design". IEEE Transactions on Microwave Theory and Techniques, 52(1):191{198, Jan 2004.spa
dcterms.bibliographicCitationL El Maazouzi, P Colantonio, A Mediavilla, and F Giannini. \A 3.5 GHz 2nd harmonic tuned PA design". pages 1090{1093, 2009.spa
dcterms.bibliographicCitationP. Colantonio, F. Giannini, and E. Limiti. \Nonlinear approaches to the design of microwave power ampli ers". International Journal of RF and Microwave Computer-Aided Engineering, 2004.spa
dcterms.bibliographicCitationL El Maazouzi, P Colantonio, A Mediavilla, and F Giannini. \A 3.5 GHz 2nd harmonic tuned PA design". pages 1090{1093, 2009.spa
dcterms.bibliographicCitationP. Colantonio, F. Giannini, and E. Limiti. \Nonlinear approaches to the design of microwave power ampli ers". International Journal of RF and Microwave Computer-Aided Engineering, 2004.spa
dcterms.bibliographicCitationBehzad Razavi and Razavi Behzad. RF microelectronics, volume 1. Prentice Hall New Jersey, 1998.spa
dcterms.bibliographicCitationGuillermo Gonzalez. Microwave transistor ampli ers: analysis and design, volume 2. Prentice hall New Jersey, 1997.spa
dcterms.bibliographicCitationSteve C. Cripps. RF Power Ampli ers for Wireless Communications. Artech House, Inc., Norwood, MA, USA, 2006.spa
dcterms.bibliographicCitationA. A M Saleh and D.C. Cox. \Improving the Power-Added E ciency of FET Ampli ers Operating with Varying-Envelope Signals". IEEE Transactions on Microwave Theory and Techniques, 31(1):51{56, Jan 1983.spa
dcterms.bibliographicCitationGuodong Su, Lingling Sun, Jincai Wen, Huang Wang, Zhiping Yu, and Nan Zhang. \An estimable stability method applied to power ampli er design". In Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2011 IEEE, pages 1{4. IEEE, 2011.spa
dcterms.bibliographicCitationGeorge D Vendelin, Anthony M Pavio, and Ulrich L Rohde. Microwave circuit design using linear and nonlinear techniques. John Wiley & Sons, 2005.spa
dcterms.bibliographicCitationRaymond S Pengelly, Simon M Wood, James W Milligan, Scott T Sheppard, and William L Pribble. \A review of GaN on SiC high electron-mobility power transistors and MMICs". IEEE Transactions on Microwave Theory and Techniques, 60(6):1764{1783, 2012.spa
dcterms.bibliographicCitationP Colantonio, F Giannini, and E Limiti. \HF class F design guidelines". In Microwaves, Radar and Wireless Communications, 2004. MIKON-2004. 15th International Conference on, volume 1, pages 27{37. IEEE, 2004.spa
dcterms.bibliographicCitationJorge Juli an Moreno Rubio, Andr es Fernando Jimenez L opez, and Nelson Barrera Lombana. \THE TUNED LOAD POWER AMPLIFIER". COLOMBIAN JOURNAL OF ADVANCED TECHNOLOGIES, 2(22), 2013.spa
dcterms.bibliographicCitationJunghwan Moon, Seunghoon Jee, Jungjoon Kim, Jangheon Kim, and Bumman Kim. \Behaviors of Class-F and Class-Ampli ers". IEEE Transactions on Microwave Theory and Techniques, 60(6):1937{1951, 2012.spa
dcterms.bibliographicCitationCree Corporation. \Datasheet CGH40010". Rev. 3.1, 2006-2011.spa
dcterms.bibliographicCitationJulian Moreno, William Cuevas, and Edison Angarita. \Extraccion de la red parasita de la salida en dispositivos GaN-HEMT para aplicaciones en alta frecuencia". 2014.spa
dcterms.bibliographicCitationJulian Moreno, Nidia Cely, Javier Rodriguez, Juan Pachon, and Juan Espana. \Estrategia de diseño para un ampli cador de potencia de alta e ciencia Clase F a 1.9 GHz". 2014.spa
dcterms.bibliographicCitationJorge Moreno, Jie Fang, Roberto Quaglia, Vittorio Camarchia, Marco Pirola, and Giovanni Ghione. \Development of single-stage and doherty GaN-based hybrid RF power ampli ers for quasi-constant envelope and high peak to average power ratio wireless standards". Microwave and optical technology letters, 54(1):206{210, 2012.spa
dcterms.bibliographicCitationJorge Moreno Rubio, Jie Fang, Roberto Quaglia, V Camarchia, M Pirola, S Donati Guerrieri, and Giovanni Ghione. \A 22W 65% e ciency GaN Doherty power ampli er at 3.5 GHz for WiMAX applications". In Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2011 Workshop on, pages 1{4. IEEE, 2011.spa
dcterms.bibliographicCitationJie Fang, Roberto Quaglia, J Moreno Rubio, V Camarchia, M Pirola, S Donati Guerrieri, and G Ghione. \Design and baseband predistortion of a 43.5 dBm GaN Doherty ampli er for 3.5 GHz WiMAX applications". In Microwave Integrated Circuits Conference (EuMIC), 2011 European, pages 256{259. IEEE, 2011.spa
dcterms.bibliographicCitationShirt Fun Ooi, Steven Gao, A Sambell, D Smith, and P Butterworth. \High e ciency class-F power ampli er design". pages 113{118, 2004.spa
dcterms.bibliographicCitationYoung Yun Woo, Youngoo Yang, and Bumman Kim. \Analysis and experiments for high-e ciency class-F and inverse class-F power ampli ers". IEEE Transactions on Microwave Theory and Techniques, 54(5):1969{1974, 2006.spa
dcterms.bibliographicCitationSong Liu and Dominique Schreurs. \Intrinsic Class-F RF GaN Power Ampli er with a Commercial Transistor Based on a Modi ed "Hybrid" Approach". pages 1{3, Sept 2012.spa
dcterms.bibliographicCitationDaehyun Kang, Daekyu Yu, Kyoungjoon Min, Kichon Han, Jinsung Choi, Dongsu Kim, Boshi Jin, Myoungsu Jun, and Bumman Kim. \A highly e cient and linear class-AB/F power ampli er for multimode operation". IEEE Transactions on Microwave Theory and Techniques, 56(1):77{87, 2008.spa
dcterms.bibliographicCitationElisa Cipriani, Paolo Colantonio, Franco Giannini, and Rocco Giofr e. \ Theoretical and experimental comparison of Class F vs. Class F- 1 PAs". In Microwave Integrated Circuits Conference (EuMIC), 2010 European, pages 428{431. IEEE, 2010.spa
dc.identifier.localT CD E49.14 P438 ej.1-
dc.rights.accessrightsinfo:eu-repo/semantics/openAccessspa
dc.thesis.disciplineFacultad Seccional Sogamoso, Escuela de Ingeniería Electrónicaspa
dc.thesis.levelPregradospa
dc.thesis.nameIngeniero Electrónicospa
dc.type.dcmi-type-vocabularyTextspa
dc.type.driverinfo:eu-repo/semantics/bachelorThesisspa
dc.type.versioninfo:eu-repo/semantics/publishedVersionspa
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