Please use this identifier to cite or link to this item: http://repositorio.uptc.edu.co/handle/001/2367
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dc.contributor.authorQuijano Ortega, Natalia-
dc.contributor.authorGaona Jurado, Sonia-
dc.contributor.authorRamírez Sanabria, Alfonso Enrique-
dc.date.accessioned2019-01-31T20:42:40Z-
dc.date.available2019-01-31T20:42:40Z-
dc.date.issued2018-07-04-
dc.identifier.citationQuijano Ortega, N., Gaona Jurado, S. & Ramírez Sanabria, A. E. (2018). Synthesis and characterization of Pr2S3 binary compound. Ciencia en Desarrollo, 9(2), 95-98. DOI: https://doi.org/10.19053/01217488.v9.n2.2018.5974. http://repositorio.uptc.edu.co/handle/001/2367spa
dc.identifier.issn2462-7658-
dc.identifier.urihttp://repositorio.uptc.edu.co/handle/001/2367-
dc.description1 recurso en línea (páginas 95-98).spa
dc.description.abstractIn the current work it is shown that the synthesis method that consists in direct reaction of praseodymium and sulfur in its elemental form, using heat as a treatment, with relatively low temperatures and reaction time of one week, allows the preparation of Pr2S3 compound, with a purity of about 92%. The respective characterization of resultant materials was carried out using powder XRD, where by it was determined that the thermal treatment used, effectively leads to the binary sulfide of interest, a compound known to be semiconductor.eng
dc.description.abstractEn el trabajo actual se muestra que el método de síntesis que consiste en la reacción directa de praseodimio y azufre en su forma elemental, utiliza calor como tratamiento, con temperaturas relativamente bajas y tiempo de reacción de una semana, permite la preparación del compuesto Pr2S3, con una pureza de alrededor del 92%. La caracterización respectiva de los materiales resultantes se llevó a cabo utilizando polvo XRD, donde se determinó que el tratamiento térmico utilizado conduce de manera efectiva a la fuente binaria de interés, un compuesto conocido por ser semiconductor.spa
dc.format.mimetypeapplication/pdfspa
dc.language.isoengspa
dc.publisherUniversidad Pedagógica y Tecnológica de Colombiaspa
dc.rightsCopyright (c) 2018 Universidad Pedagógica y Tecnológica de Colombiaspa
dc.rights.urihttps://creativecommons.org/licenses/by-nc/4.0/spa
dc.sourcehttps://revistas.uptc.edu.co/index.php/ciencia_en_desarrollo/article/view/5974/7262spa
dc.titleSynthesis and characterization of Pr2S3 binary compoundspa
dc.title.alternativeSíntesis y caracterización del compuesto binario Pr2S3spa
dc.typeArtículo de revistaspa
dc.description.notesBibliografía: página 98.spa
dc.rights.accessrightsinfo:eu-repo/semantics/openAccessspa
dc.type.coarhttp://purl.org/coar/resource_type/c_6501spa
dc.type.driverinfo:eu-repo/semantics/articlespa
dc.type.versioninfo:eu-repo/semantics/publishedVersionspa
dc.identifier.doi10.19053/01217488.v9.n2.2018.5974-
dc.relation.referencesSelishchev, A. and V. Pavlishchuk, Effect of Formation Conditions on the Size, Shape and Spectral Properties of EuS and Pr2S3 Nanoparticles. Theoretical and Experimental Chemistry, 2014. 50(1): p. 39-45.spa
dc.relation.referencesKrichevtsov, B., Anisotropy of the linear and quadratic magnetic birefringence in rare-earth semiconductors (γ-Ln2S3 (Ln= Dy3+, Pr3+, Gd3+, La3+). Journal of Experimental and Theoretical Physics, 2001. 92(5): p. 830-839.spa
dc.relation.referencesOhta, M., et al., Preparation of R2S3 (R: La, Pr, Nd, Sm) powders by sulfurization of oxide powders using CS2 gas. Journal of alloys and compounds, 2004. 374(1): p. 112-115.spa
dc.relation.referencesOhta, M., et al., Phase transformation and microstructures of Ln2S3 (Ln= La, Sm) with different impurities content of oxygen and carbon. Journal of alloys and compounds, 2006. 408: p. 551-555.spa
dc.relation.referencesOhta, M., et al., Thermoelectric properties of Th3P4-type rare-earth sulfides Ln2S3 (Ln= Gd, Tb) prepared by reaction of their oxides with CS2 gas. Journal of Alloys and Compounds, 2008. 451(1): p. 627-631.spa
dc.rights.creativecommonsAtribución-NoComercialspa
dc.subject.proposalTratamiento con praseodimiospa
dc.subject.proposalTratamiento térmicospa
dc.subject.proposalSemiconductorspa
dc.relation.ispartofjournalCiencia en Desarrollo;Volumen 9, número 2 (Julio-Diciembre 2018)spa
dc.type.contentTextspa
dc.type.redcolhttps://purl.org/redcol/resource_type/ARTspa
oaire.versionhttp://purl.org/coar/version/c_970fb48d4fbd8a85spa
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