Near-Field Thermal Transistor InSb/WSM/InSb

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dc.creatorVillamil-Malagon, D.
dc.creatorMoncada-Villa, E.
dc.date2023-12-12
dc.date.accessioned2024-07-08T14:24:13Z
dc.date.available2024-07-08T14:24:13Z
dc.descriptionNear-field radiative heat transfer has attracted increasing attention in recent years in the development and manufacturing of thermal devices analogous to the building blocks of current microelectronics. In this work, we study theoretically a near-field thermal transistor operating at room temperature. The source and drain were assumed as indium antimonide (InSb) plates, whereas the gate as a Weyl semimetal (WSM). Numerical results computed using the fluctuational electrodynamics framework indicate that the modulation and/or amplification of the heat flux in the considered transistor can be achieved by modifying the gate temperature, and by the action of an external magnetic field upon the system. Results obtained in this work make the proposed near-field thermal transistor a suitable candidate for the contactless devices for the heat flux control and thermal management at nanoscale.en-US
dc.descriptionNear-field radiative heat transfer has attracted increasing attention in recent years in the development and manufacturing of thermal devices analogous to the building blocks of current microelectronics. In this work, we study theoretically a near-field thermal transistor operating at room temperature. The source and drain were assumed as indium antimonide (InSb) plates, whereas the gate as a Weyl semimetal (WSM). Numerical results computed using the fluctuational electrodynamics framework indicate that the modulation and/or amplification of the heat flux in the considered transistor can be achieved by modifying the gate temperature, and by the action of an external magnetic field upon the system. Results obtained in this work make the proposed near-field thermal transistor a suitable candidate for the contactless devices for the heat flux control and thermal management at nanoscale.es-ES
dc.formatapplication/pdf
dc.identifierhttps://revistas.uptc.edu.co/index.php/ciencia_en_desarrollo/article/view/17439
dc.identifier10.19053/uptc.01217488.v14.nE.2023.17439
dc.identifier.urihttps://repositorio.uptc.edu.co/handle/001/15414
dc.languagespa
dc.publisherUniversidad Pedagógica y Tecnológica de Colombiaes-ES
dc.relationhttps://revistas.uptc.edu.co/index.php/ciencia_en_desarrollo/article/view/17439/13962
dc.sourceCiencia En Desarrollo; Vol. 14 No. E (2023): VI International Meeting of the faculty of Sciences (IMFaS 2023); 39-43en-US
dc.sourceCiencia en Desarrollo; Vol. 14 Núm. E (2023): VI Encuentro Internacional de la Facultad de Ciencias (IMFaS 2023); 39-43es-ES
dc.source2462-7658
dc.source0121-7488
dc.subjectNear-Field Thermal Transistor, Thermotronics, Near-Field Radiative Heat Transfer, Thermal Management, Surface Waves, Magneto-Optic Medium, Weyl Semimetal.es-ES
dc.titleNear-Field Thermal Transistor InSb/WSM/InSben-US
dc.titleNear-Field Thermal Transistor InSb/WSM/InSbes-ES
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/publishedVersion
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